SiGe HBT wideband amplifier for millimeter wave applications
نویسندگان
چکیده
A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz f t SiGe BiCMOS technology. Die size was 0.7×0.73 mm. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported. Keywords— wideband amplifier, HBT, SiGe, millimeter wave, bipolar integrated circuits.
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